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1 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 1. product overview 1.1 general description aw g1020 e , a gain block amplifier mmic, has high linearity , low noise and high efficiency over a wide range of frequency from 30 mhz to 4000 mhz, being suitable for use in both receiver and transmitter of telecommunication system up to 4 ghz . it has an active bias network for stable current over temperature and process variation. the amplifier is available in a n sot 363 package and passes through the stringent dc , rf , and reliability test s. 1.2 features ? 1 8.8 db gain at 20 00 mhz ? 18.0 dbm p1db at 2000 mhz ? 32 .0 dbm oip3 at 2000 mhz ? gain flatness = 1. 9 db at 500 ~ 25 00 mhz ? 50 ? input & output matching ? mttf > 100 years ? single supply: + 3.3 v 1.3 app lications ? wide - band application at 500 ~ 300 0 mhz ? if, catv application at 3 0 ~ 1 2 00 mhz ? smatv, onu application at 50 ~ 30 00 mhz 1.4 package profile & rohs compliance sot 363, 2.1x2.0 mm 2 , surface mount rohs - compliant awg1020 e data sheet 30 ~ 4000 mhz wide - band gain block amplifier mmic gain & return loss vs. frequency (with bias tees) 0 1000 2000 3000 4000 5000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 40 s-parameter (db) s22 s11 s21
2 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 2. summary on product performances 2.1 typical performance supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter typical unit frequency 70 150 300 450 900 2000 2500 2700 mhz gain 20.3 20.3 20.2 20.2 20.0 18.8 18.4 18.3 db s11 - 15 .0 - 17 .0 - 17 .0 - 17 .0 - 18 .0 - 18 .0 - 17 .0 - 16 .0 db s22 - 16 .0 - 16 .0 - 17 .0 - 1 8 .0 - 17 .0 - 18 .0 - 18.0 - 18 .0 db noise figure 1.9 1.7 1.7 1.7 1.8 2.3 2.7 3.1 db output ip3 1) 32.0 33.0 33.0 34.0 34.0 32.0 27.0 24.0 dbm output p1db 18. 0 18. 0 18 .0 18. 0 18. 0 18.0 17.0 16.0 db m current 70 device voltage +3.3 1) oip3 is measured with two tones at an output power of +4 dbm/tone separated by 1mhz . 2.2 product specification supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter min typ max unit frequency 2000 mhz gain 18.8 db s11 - 18 .0 db s22 - 18 .0 db noise figure 2.3 db oip3 32.0 dbm p1db 18.0 dbm current 70 ma device voltage +3.3 v 2.3 pin configuration pin description simplified outline 1, 2, 4, 5 ground 3 rf_input 6 rf_out & bias 1 2 3 4 5 6
3 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 2.4 absolute maximum ratings parameters max. ratings operation case temperature - 40 to ? 85 ? c storage temperature - 40 to ? 150 ? c device voltage + 4 v operation junction temper ature +150 ? c input rf power ( at 2000 mhz, cw, 50 ? matched) * + 27 dbm *please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf the max. input power, in principle, depends upon the appl ication frequency and matching circuit. 2.5 thermal resistance symbol description typ unit r th thermal resistance from junction to lead 140 ? c/w 2.6 esd classification & moisture sensitivity level esd clas sification hbm class 1b voltage level: 750 v mm class a voltage level: 100 v caution: gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. moisture sensitivity leve l m sl 3 at 260 ? c reflow (intentionally blanked)
4 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 3. application : 5 00 ~ 3 0 00 mhz 3.1 application circuit & evaluation board bill of material symbol value size description manufacturer awg1020 e - - mmic amplifier asb c1, c2 1 00 pf 0603 dc block ing capacitor murata c3 100 pf 0603 decoupling capacitor murata c 4 1 ? f 0603 decoupling capacitor murata l1 47 nh 0603 rf choke inductor murata c4 c1 c2 l1 c3 AWG1020E rf in rf out vdevice = +3.3 v
5 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 3.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 500 900 2000 2500 2700 3000 mhz gain 20.3 20.0 18.8 18.4 18.3 18.0 db s11 - 1 7 .0 - 18 .0 - 18 .0 - 17 .0 - 16 .0 - 13 .0 db s22 - 13.0 - 17 .0 - 18 .0 - 18.0 - 18 .0 - 17 .0 db noise figure 1.8 1.8 2.3 2.7 3.1 3. 6 db output ip3 1) 35.0 34.0 32.0 27.0 24.0 20.0 dbm output p1db 18.0 18. 0 18.0 17.0 16.0 13.0 dbm current 70 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +4 dbm/tone separated by 1mhz . 3.3 plot of s - parameter & stability factor 0 1000 2000 3000 4000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 1 2 3 4 5 6 7 stability factor k s11 s22 s12 k s21
6 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 3.4 plot s of noise figure and performances with temperature 0 500 1000 1500 2000 2500 3000 3500 4000 frequency (mhz) -40 -30 -20 -10 0 s22 (db) -40 c +25 c +85 c 0 500 1000 1500 2000 2500 3000 3500 4000 frequency (mhz) 0 5 10 15 20 25 gain (db) -40 c +25 c +85 c 0 500 1000 1500 2000 2500 3000 3500 4000 frequency (mhz) -40 -30 -20 -10 0 s11 (db) -40 c +25 c +85 c -60 -40 -20 0 20 40 60 80 100 temperature (c) 40 45 50 55 60 65 70 75 80 current (ma) -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 5 10 15 20 25 gain (db) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 1 2 3 4 5 nf (db) frequency = 2000 mhz
7 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e (intentionally blanked) -60 -40 -20 0 20 40 60 80 100 temperature (c) 28 30 32 34 36 oip3 (dbm) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 14 16 18 20 22 p1db (dbm) frequency = 2000 mhz
8 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 4. application : 30 ~ 1200 mhz ( if, catv ) 4.1 application circuit & evaluation board bill of material symbol value size description manufacturer awg1020 e - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l1 3.3 ? h 0603 rf choke inductor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 c4 c1 c2 l1 c3 AWG1020E rf in rf out vdevice = +3.3 v
9 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 4.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 30 70 150 300 450 860 1000 1200 mhz gain 20.7 20.3 20.3 20.2 20.2 19.8 19.6 19.3 db s11 - 10 .0 - 15 .0 - 17 .0 - 17 .0 - 17 .0 - 15 .0 - 1 4 .0 - 1 4 .0 db s22 - 16 .0 - 16 .0 - 16 .0 - 17 .0 - 1 8 .0 - 18.0 - 18.0 - 18.0 db noise figure 2.5 1.9 1.7 1.7 1.7 1.7 1.8 1.8 db output ip3 1) 30.0 32.0 33.0 33.0 34.0 33.0 33 .0 3 2 .0 dbm output p1db 18.0 18. 0 18. 0 18 .0 18. 0 18. 0 18. 0 18. 0 dbm current 70 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +4 dbm/tone separated by 1mhz . 4.3 plot of s - parameter & stability facto r 0 300 600 900 1200 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 1 2 3 4 5 6 7 stability factor k s22 s11 s21 s12 k
10 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 5. application : 50 ~ 30 00 mhz ( smatv, onu ) 5.1 application circuit & evaluation board bill of material symbol value size description manufacturer awg1020 e - - mmic amplifier asb c1, c2 1 ? f 0603 dc blo ck ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l1 1 ? h 0603 rf choke inductor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 363 - a2 c4 c1 c2 l1 c3 AWG1020E rf in rf out vdevice = +3.3 v
11 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 5.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 50 500 1000 2000 2500 3000 mhz gain 20.5 20.2 19.6 17.9 17.0 16.1 db s11 - 13 .0 - 17 .0 - 15 .0 - 1 3. 0 - 13.0 - 1 2 .0 db s22 - 15 .0 - 17 .0 - 18 .0 - 15.0 - 12.0 - 9.0 db noise figure 2.3 1.8 1.8 2.3 2.7 3.7 db output ip3 1) 31.0 34.0 32.0 31.0 28.0 20.0 dbm output p1db 17.0 18.0 18.0 17.0 16.0 13 .0 dbm current 70 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +4 dbm/tone separated by 1mhz . 5.3 plot of s - parameter & stability factor 0 500 1000 1500 2000 2500 3000 3500 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 1 2 3 4 5 6 7 stability factor k k s12 s11 s22 s21
12 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 6. package outline (sot363, 2.1x2.0x1.0 mm) 7. surface mount rec ommendation (in mm) symbols dime nsions (in mm) min nom max a 0.900 1.000 1.10 a1 0.025 0.062 0.10 a2 0.875 0.937 1.00 b 0.200 0.300 0.40 c 0.100 0.125 0.15 d 1.900 2.000 2.10 f 1.150 1.250 1.35 e1 2.000 2.100 2.20 e 0.65bsc e 1 1.30bsc l 0.425ref n ote 1. the number and size of ground via holes in a circuit board are critical for thermal and rf grounding considerations. 2. r ecommend is that the ground via holes be placed on th e bottom of the ground lead s of the device for better rf and thermal performance, as shown in the drawing at the left side . g20 1.48 1.33 0.30 0.42 0.50 1.23 0.30 0.25 1.75 0.40
13 / 13 asb inc. ? sales@asb .co.kr januar y 201 7 awg1020 e 8. recommended soldering reflow profile (end of datasheet) copyright ? 2014 - 2017 asb inc. all rights reserved. datasheet subject to change without notice. asb assumes no responsibility fo r any errors which may appear in this datasheet. no part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of asb. 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec)

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